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Fabrication and centeracterization of ordered CuIn(1−x)Ga x Se2 nanopore films via template-based electrodeposition

Ming Li1, Maojun Zheng1*, Tao Zhou1, Changli Li1, Li Ma2 and Wenzhong Shen1

Author Affiliations

1 Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai, 200240, People’s Republic of China

2 School of Chemistry & Chemical Technology, Shanghai Jiao Tong University, Shanghai, 200240, People’s Republic of China

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Nanoscale Research Letters 2012, 7:675  doi:10.1186/1556-276X-7-675

Published: 17 December 2012


Ordered CuIn(1−x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting.

CuIn(1−x)GaxSe2; nanopore films; electrodeposition; anodic aluminumoxide; annealing; 82.45.Yz; 81.05.Rm; 81.15.Pq; 81.40.Ef