Fabrication and photocatalytic properties of silicon nanowires by metal-assisted chemical etching: effect of H2O2 concentration
1 College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211100, People's Republic of China
2 College of Physics and Electronics Information, Anhui Normal University, Wuhu, 241000, People's Republic of China
3 College of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China
Citation and License
Nanoscale Research Letters 2012, 7:663 doi:10.1186/1556-276X-7-663Published: 5 December 2012
In the current study, monocrystalline silicon nanowire arrays (SiNWs) were prepared through a metal-assisted chemical etching method of silicon wafers in an etching solution composed of HF and H2O2. Photoelectric properties of the monocrystalline SiNWs are improved greatly with the formation of the nanostructure on the silicon wafers. By controlling the hydrogen peroxide concentration in the etching solution, SiNWs with different morphologies and surface characteristics are obtained. A reasonable mechanism of the etching process was proposed. Photocatalytic experiment shows that SiNWs prepared by 20% H2O2 etching solution exhibit the best activity in the decomposition of the target organic pollutant, Rhodamine B (RhB), under Xe arc lamp irradiation for its appropriate Si nanowire density with the effect of Si content and contact area of photocatalyst and RhB optimized.