Effects of Sn doping on the morphology and properties of Fe-doped In2O3 epitaxial films
1 School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China
2 School of Information Science and Engineering, Shandong University, Jinan 250100, People's Republic of China
3 Physics Department, Portland State University, PO Box 751, Portland, OR 97207, USA
Citation and License
Nanoscale Research Letters 2012, 7:661 doi:10.1186/1556-276X-7-661Published: 30 November 2012
(Sn, Fe)-codoped In2O3 epitaxial films were deposited on (111)-oriented Y-stabilized ZrO2 substrates by pulsed laser deposition with constant Fe concentration and different Sn concentrations. The influence of Sn concentration on the crystal structure and properties of Fe-doped In2O3 ferromagnetic semiconductor films has been investigated systematically. Experimental results indicate that Sn doping can effectively reduce the surface roughness and suppresses breakup of the films into separated islands. At the same time, the optical band gap increases and the electrical properties improve correspondingly. However, although the carrier density increases dramatically with the Sn doping, no obvious change of the ferromagnetism is observed. This is explained by a modified bounded magnetic polaron model.