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Open Access Nano Express

Effects of Sn doping on the morphology and properties of Fe-doped In2O3 epitaxial films

Tie Zhou1, Lin Wei2, Yanru Xie1, Qinghao Li1, Guoxiang Hu1, Yanxue Chen1*, Shishen Yan1, Guolei Liu1, Liangmo Mei1 and Jun Jiao3

Author affiliations

1 School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China

2 School of Information Science and Engineering, Shandong University, Jinan 250100, People's Republic of China

3 Physics Department, Portland State University, PO Box 751, Portland, OR 97207, USA

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Citation and License

Nanoscale Research Letters 2012, 7:661  doi:10.1186/1556-276X-7-661

Published: 30 November 2012

Abstract

(Sn, Fe)-codoped In2O3 epitaxial films were deposited on (111)-oriented Y-stabilized ZrO2 substrates by pulsed laser deposition with constant Fe concentration and different Sn concentrations. The influence of Sn concentration on the crystal structure and properties of Fe-doped In2O3 ferromagnetic semiconductor films has been investigated systematically. Experimental results indicate that Sn doping can effectively reduce the surface roughness and suppresses breakup of the films into separated islands. At the same time, the optical band gap increases and the electrical properties improve correspondingly. However, although the carrier density increases dramatically with the Sn doping, no obvious change of the ferromagnetism is observed. This is explained by a modified bounded magnetic polaron model.

Keywords:
Magnetic semiconductor; Indium oxide; Morphology; Epitaxial film