Table 1 |
||||
| Photovoltaic cell performances obtained for ITO/ZnO/P3HT:PCBM/Ag devices containing ZnO nanorods annealed in air at different temperatures | ||||
| Annealing temperature of ZnO array (°C) | Open-circuit voltage (V) | Short-circuit current density (mA cm−2) | Fill factor (%) | Efficiency (%) |
| As-deposited | 0.04 | 5.60 | 24.76 | 0.06 |
| 100 | 0.02 | 6.25 | 24.53 | 0.04 |
| 200 | 0.14 | 6.72 | 28.20 | 0.27 |
| 300 | 0.45 | 7.28 | 40.96 | 1.34 |
| 400 | 0.46 | 7.26 | 39.42 | 1.32 |
The ZnO nanorod arrays were annealed to different temperatures before cell fabrication.
Iza et al. Nanoscale Research Letters 2012 7:655 doi:10.1186/1556-276X-7-655
