Table 1

Photovoltaic cell performances obtained for ITO/ZnO/P3HT:PCBM/Ag devices containing ZnO nanorods annealed in air at different temperatures
Annealing temperature of ZnO array (°C) Open-circuit voltage (V) Short-circuit current density (mA cm−2) Fill factor (%) Efficiency (%)
As-deposited 0.04 5.60 24.76 0.06
100 0.02 6.25 24.53 0.04
200 0.14 6.72 28.20 0.27
300 0.45 7.28 40.96 1.34
400 0.46 7.26 39.42 1.32

The ZnO nanorod arrays were annealed to different temperatures before cell fabrication.

Iza et al.

Iza et al. Nanoscale Research Letters 2012 7:655   doi:10.1186/1556-276X-7-655

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