Figure 2.

One-band model calculation for a type-II QW. (a) Calculated band diagram of a 6-nm GaAsSb/GaAs QW for a sheet charge density of 1 × 1011 cm-2: self-consistent potential (solid lines) and flat-band potential (dashed lines). Electron and heavy-hole wavefunctions with their eigenenergies are also plotted. (b) Calculated energy shift of the ground state for the electron (ΔEe) and the heavy-hole (ΔEhh) with respect to the flat-band condition. The transition energy shift (ΔEPL) is given by the difference between the two energy shifts.

Jo et al. Nanoscale Research Letters 2012 7:654   doi:10.1186/1556-276X-7-654
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