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CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization
Key Lab for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, China
Nanoscale Research Letters 2012, 7:652 doi:10.1186/1556-276X-7-652
Published: 27 November 2012Additional files
Additional file 1:
Figure S1. EDS spectrum of the CuInS2 QD-sensitized TiO2 NRA photoelectrode after annealed in sulfur ambiance at 500°C for 30 min. The ratio of Cu/In/S is 1.02:1.00:1.91.
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Additional file 2:
Figure S2. SAED patterns of TiO2 NR (a) and CuInS2 QDs (b).Figure S3. EDS spectra of TiO2 NRA photoelectrode after In2S3 deposition.
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Additional file 3:
Figure S4. Dark current–voltage characteristic curves of CuInS2-based QDSSC with (red dots) and without (black squares) In2S3 buffer. Figure S5. IPCE spectra of CuInS2 QD-sensitized solar cell with different SILAR cycles.
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Additional file 4:
Figure S6. Band diagram of CuInS2 QD-sensitized solar cell. Buffer layers of In2S3 are applied to suppress electron–hole recombination at the interface.
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