Figure 1.

Schematic structure of our OLED devices. MgO/Fe/MgO(001) structures were prepared beyond a chemically etched Si(001) wafer by using UHV-MBE technique, then followed by deposition of CuPc/α-NPD/Alq3/Al multilayers at room temperature by using thermal evaporation in high vacuum.

Bae et al. Nanoscale Research Letters 2012 7:650   doi:10.1186/1556-276X-7-650
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