Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes
1 Department of Physics, Ewha Womans University, Seoul, 120-750, South Korea
2 School of Electrical Engineering and Computer Science, Seoul National University, Seoul, 151-744, South Korea
3 Department of Electronics, The University of York, York, YO10 5DD, UK
Citation and License
Nanoscale Research Letters 2012, 7:650 doi:10.1186/1556-276X-7-650Published: 26 November 2012
Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer.