Figure 3.

Ids versus Vds plots at different gate voltages (Vg) for SWCNT-TFT gas sensors. Ids versus Vds plots after (a) 0, (c) 5, (e) 10, and (g) 20 min UV radiation (Vg is varied from −10 to 10 V in 2-V steps). The corresponding Ids-Vg plots of the SWCNT-TFTs after (b) 0, (d) 5, (f) 10, and (h) 20 min of UV radiation (Vds = 0.5 V, Vg = −20 to approximately 20 V).

Chen et al. Nanoscale Research Letters 2012 7:644   doi:10.1186/1556-276X-7-644
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