Figure 3.

Influence of In content and QD geometry on the electronic levels. (a) Electronic levels of InxGa1−xAs QD with geometry C. (b) Electronic levels of In0.3Ga0.7As QDs for the four geometries defined in Figure 2. The Γ electronic level and the heavy-hole level in the QD are calculated with the k·p method. The X and L electronic levels are calculated with the TB model.

Robert et al. Nanoscale Research Letters 2012 7:643   doi:10.1186/1556-276X-7-643
Download authors' original image