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Resolution: standard / high Figure 3.
Influence of In content and QD geometry on the electronic levels. (a) Electronic levels of InxGa1−xAs QD with geometry C. (b) Electronic levels of In0.3Ga0.7As QDs for the four geometries defined in Figure
2. The Γ electronic level and the heavy-hole level in the QD are calculated with the
k·p method. The X and L electronic levels are calculated with the TB model.
Robert et al. Nanoscale Research Letters 2012 7:643 doi:10.1186/1556-276X-7-643 |