Theoretical and experimental studies of (In,Ga)As/GaP quantum dots
1 Université Européenne de Bretagne, INSA Rennes, France CNRS, UMR 6082 Foton-Ohm, 20 Avenue des Buttes de Coësmes, Rennes, 35708, France
2 Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, Rennes Cedex, F-35042, France
3 Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, Toulouse, 31077, France
4 Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
Citation and License
Nanoscale Research Letters 2012, 7:643 doi:10.1186/1556-276X-7-643Published: 23 November 2012
(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.