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Theoretical and experimental studies of (In,Ga)As/GaP quantum dots

Cedric Robert1*, Tra Nguyen Thanh1, Charles Cornet1, Pascal Turban2, Mathieu Perrin1, Andrea Balocchi3, Herve Folliot1, Nicolas Bertru1, Laurent Pedesseau1, Mikhail O Nestoklon4, Jacky Even1, Jean-Marc Jancu1, Sylvain Tricot2, Olivier Durand1, Xavier Marie3 and Alain Le Corre1

Author Affiliations

1 Université Européenne de Bretagne, INSA Rennes, France CNRS, UMR 6082 Foton-Ohm, 20 Avenue des Buttes de Coësmes, Rennes, 35708, France

2 Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, Rennes Cedex, F-35042, France

3 Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, Toulouse, 31077, France

4 Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

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Nanoscale Research Letters 2012, 7:643  doi:10.1186/1556-276X-7-643

Published: 23 November 2012


(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.

Quantum dots; Tight-binding; k·p simulation; Time-resolved photoluminescence; 78.55.Cr; 78.47.jd; 78.67.Hc