Figure 2.

InAs deposited on a 90-nm-wide-patterned Si (001) substrate with an aspect ratio of 2.5. (a) Cross-sectional TEM image, (b) selected-area electron diffraction pattern taken near the trench top region, and (c) cross-sectional TEM cleft images along the direction of the InAs nanofins for InAs deposited on a 90-nm-wide-patterned Si (001) substrate with an aspect ratio of 2.5. The dislocation interruption is marked with a dashed line, and the dislocations are marked with arrows.