Figure 2.

InAs deposited on a 90-nm-wide-patterned Si (001) substrate with an aspect ratio of 2.5. (a) Cross-sectional TEM image, (b) selected-area electron diffraction pattern taken near the trench top region, and (c) cross-sectional TEM cleft images along the <a onClick="popup('http://www.nanoscalereslett.com/content/7/1/642/mathml/M8','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/7/1/642/mathml/M8">View MathML</a> direction of the InAs nanofins for InAs deposited on a 90-nm-wide-patterned Si (001) substrate with an aspect ratio of 2.5. The dislocation interruption is marked with a dashed line, and the dislocations are marked with arrows.

Hsu et al. Nanoscale Research Letters 2012 7:642   doi:10.1186/1556-276X-7-642
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