Figure 1.

One-sidewall and two-sidewall blocking. (a) Cross-sectional TEM image and (b) diffraction pattern taken near the trench top region for InAs deposited on a one-sidewall-patterned Si (001) substrate. (c) Cross-sectional TEM image and (d) diffraction pattern taken near the trench top region for InAs deposited on a 200-nm-wide patterned Si (001) substrate with an aspect ratio of 1.2. The dislocations are marked with arrows.

Hsu et al. Nanoscale Research Letters 2012 7:642   doi:10.1186/1556-276X-7-642
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