Figure 1.

One-sidewall and two-sidewall blocking. (a) Cross-sectional TEM image and (b) diffraction pattern taken near the trench top region for InAs deposited on a one-sidewall-patterned Si (001) substrate. (c) Cross-sectional TEM image and (d) diffraction pattern taken near the trench top region for InAs deposited on a 200-nm-wide patterned Si (001) substrate with an aspect ratio of 1.2. The dislocations are marked with arrows.