Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

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Chao-Wei Hsu^*, Yung-Feng Chen and Yan-Kuin Su^*

* Corresponding authors: Chao-Wei Hsu q1897124@mail.ncku.edu.tw - Yan-Kuin Su yksu@mail.ncku.edu.tw

Nanoscale Research Letters 2012, 7:642 doi:10.1186/1556-276X-7-642

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