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In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

Tae-Youb Kim1*, Chul Huh1, Nae-Man Park1, Cheol-Jong Choi2 and Maki Suemitsu3*

Author Affiliations

1 Convergence Components and Materials Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Republic of Korea

2 Department of Semiconductor Science and Technology, Chonbuk National University, Jeonju, 561-756, Republic of Korea

3 Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

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Nanoscale Research Letters 2012, 7:634  doi:10.1186/1556-276X-7-634

Published: 21 November 2012


Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.

Silicon nanocrystals; in situ-formed Si-NCs; Silicon carbide-based films; Hexagonal silicon phase structure