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Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy

Andrea Picco1, Emiliano Bonera1*, Fabio Pezzoli12, Emanuele Grilli1, Oliver G Schmidt2, Fabio Isa3, Stefano Cecchi3 and Mario Guzzi1

Author affiliations

1 L-NESS, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 53, Milan 20125, Italy

2 Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr 20, Dresden, 01069, Germany

3 L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo Regionale di Como, Via Anzani 42, Como, 22100, Italy

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Citation and License

Nanoscale Research Letters 2012, 7:633  doi:10.1186/1556-276X-7-633

Published: 21 November 2012


In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands.

Raman; SiGe; Nanotechnology; Composition; Structural characterization; Raman efficiency