Figure 4.

Typical reflectance spectrum. Reflectance spectrum (black line) of the GaAs NWs grown by 0.1-nm thick Au film on SiO2/Si substrates, which determines the electronic bandgap (Eg) of approximately 1.62 eV by extrapolation (red line).

Han et al. Nanoscale Research Letters 2012 7:632   doi:10.1186/1556-276X-7-632
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