Dilute nitride and GaAs n-i-p-i solar cells
1 School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
2 Optoelectronic Research Centre, Tampere University of Technology, Tampere, 33720, Finland
3 Surrey Ion Beam Centre, Advanced Technology Institute of Surrey, University of Surrey, Surrey, GU2 7XH, UK
Nanoscale Research Letters 2012, 7:631 doi:10.1186/1556-276X-7-631Published: 20 November 2012
We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg and Si ion implantation, followed by rapid thermal annealing treatment and fabrication into circular mesa cells. As means of characterisation, spectral response and illuminated current–voltage (I-V) were measured on the samples. The spectral response suggests that all horizontal layers are able to contribute to the photocurrent. Performance of the devices is discussed with interest in the n-i-p-i structure as a possible design for the GaInP/GaAs/GaInNAs tandem solar cell.