Effects of shutter transients in molecular beam epitaxy
National Institute of Advanced Industrial Science and Technology (AIST), Network Photonics Research Center, AIST Tsukuba Central2, 1-1-1 Umezono, Ibaraki, 305-8568, Tsukuba, Japan
Nanoscale Research Letters 2012, 7:620 doi:10.1186/1556-276X-7-620Published: 12 November 2012
We have studied the effects of shutter transients (STs) in molecular beam epitaxy (MBE). Two series of samples were grown by MBE and evaluated by X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements. The effects of STs were evaluated by growth rate (GR) analysis using a combination of growth time (GT) and thickness evaluated by XRD and XRR measurements. We revealed two opposite effects of STs: (1) overshoot of GR and (2) increase in GR with GT and subsequent saturation. Each effect was consistent with the previous studies; however, the previous studies showed no relationships between these two effects. By considering closing time of the shutter, the two opposite effects were well understood.