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A study on the characteristics of plasma polymer thin film with controlled nitrogen flow rate

Sang-Jin Cho and Jin-Hyo Boo*

Author Affiliations

Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, South Korea

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Nanoscale Research Letters 2012, 7:62  doi:10.1186/1556-276X-7-62

Published: 5 January 2012


Nitrogen-doped thiophene plasma polymer [N-ThioPP] thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Thiophene was used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, nitrogen gas [N2] was used as nitrogen dopant. Furthermore, additional argon was used as a carrier gas. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-ThioPP film. The FT-IR spectra showed that the N-ThioPP films were completely fragmented and polymerized from thiophene.

PECVD; plasma polymer; N-ThioPP; optical; physical; and chemical properties