Table 1 |
|||
| TEM-EDX of crystalline nanostructures of Al and Si oxides for varying dwell times | |||
| Element | Dwell time | ||
| 3 ms | 5 ms | 9 ms | |
| Aluminum | 30.06 | 18.99 | 3.81 |
| Silicon | 9.58 | 15.67 | 49.77 |
| Oxygen | 60.36 | 65.33 | 46.42 |
Sivayoganathan et al. Nanoscale Research Letters 2012 7:619 doi:10.1186/1556-276X-7-619
