Figure 1.

Parameters used in growing a single InGaN QD and GaN barrier period in sample E. Regions indicating the different growth periods: I, InGaN QD; II, growth interruption; III, protective GaN barrier; IV, temperature ramping and gas switching; V, GaN barrier; VI, temperature decreasing and gas switching; VII, InGaN QD.

Lv et al. Nanoscale Research Letters 2012 7:617   doi:10.1186/1556-276X-7-617
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