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InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

Wenbin Lv1, Lai Wang12*, Jiaxing Wang1, Zhibiao Hao1 and Yi Luo1

Author Affiliations

1 Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People’s Republic of China

2 Present Address: Tsinghua University, Room 2-305, Rohm Building, Beijing, 100084, People’s Republic of China

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Nanoscale Research Letters 2012, 7:617  doi:10.1186/1556-276X-7-617

Published: 7 November 2012

Abstract

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Keywords:
InGaN quantum dots; GaN barriers; metalorganic vapor phase epitaxy; light-emitting diodes