Figure 12.

I-Vhysteresis and data retention. (a) Typical I-V hysteresis for the S2 device with a low CC of 1 nA. However, a high RESET current of 1 μA is observed owing to the faster migration of Cuz+ ions or a larger Cu filament diameter. (b) Good data retention is observed in the S2 devices for a CC of 1 nA. (c) Typical I-V hysteresis for the S1 devices. The observed low RESET current of approximately 64 pA is due to the controlled migration of Cuz+ ions. (d) Typical data retention characteristics at a small CC of 1 nA for a device size of 8 × 8 μm2.

Rahaman et al. Nanoscale Research Letters 2012 7:614   doi:10.1186/1556-276X-7-614
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