Open Access Email this article to a friend

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

Sheikh Ziaur Rahaman, Siddheswar Maikap*, Atanu Das, Amit Prakash, Ya Hsuan Wu, Chao-Sung Lai, Ta-Chang Tien, Wei-Su Chen, Heng-Yuan Lee, Frederick T Chen, Ming-Jinn Tsai and Liann-Be Chang

Nanoscale Research Letters 2012, 7:614  doi:10.1186/1556-276X-7-614

Fields marked * are required

Multiple email addresses should be separated with commas or semicolons.
How can I ensure that I receive Nanoscale Research Letters's emails?