Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
Sheikh Z Rahaman, Siddheswar Maikap*, Atanu Das, Amit Prakash, Ya H Wu, Chao-Sung Lai, Ta-Chang Tien, Wei-Su Chen, Heng-Yuan Lee, Frederick T Chen, Ming-Jinn Tsai and Liann-Be Chang