Figure 1.

Theoretical PL spectra, at 2 K, for unstrained p-doped GaAs/InxGa1−xAs1−yNySL. With x = 3%, y = 1.3%, barrier width, d1 = 3 nm, and well width, d2 = 3 nm. The acceptor concentration is varied for NA = 1 × 1018 cm−3 (solid line), 2 × 1018 cm−3 (dashed line), 4 × 1018 cm−3 (dotted line), and 6 × 1018 cm−3 (dot-dashed line).

de Oliveira et al. Nanoscale Research Letters 2012 7:607   doi:10.1186/1556-276X-7-607
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