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Theoretical luminescence spectra in p-type superlattices based on InGaAsN

Thiago F de Oliveira1, Sara CP Rodrigues1*, Luísa MR Scolfaro2, Guilherme M Sipahi3 and Eronides F da Silva4

Author affiliations

1 Departamento de Física, Universidade Federal Rural de Pernambuco, Rua Dom Manoel de Medeiro s/n, Recife, Pernambuco, 52171-900, Brazil

2 Department of Physics, Texas State University, San Marcos, TX, 78666, USA

3 Instituto de Física de São Carlos, Universidade de São Paulo, CP369, São Carlos, São Paulo, 13560-970, Brazil

4 Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitária, Pernambuco, 50670-901, Brazil

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Citation and License

Nanoscale Research Letters 2012, 7:607  doi:10.1186/1556-276X-7-607

Published: 31 October 2012


In this work, we present a theoretical photoluminescence (PL) for p-doped GaAs/InGaAsN nanostructures arrays. We apply a self-consistent <a onClick="popup('','MathML',630,470);return false;" target="_blank" href="">View MathML</a> method in the framework of the effective mass theory. Solving a full 8 × 8 Kane's Hamiltonian, generalized to treat different materials in conjunction with the Poisson equation, we calculate the optical properties of these systems. The trends in the calculated PL spectra, due to many-body effects within the quasi-two-dimensional hole gas, are analyzed as a function of the acceptor doping concentration and the well width. Effects of temperature in the PL spectra are also investigated. This is the first attempt to show theoretical luminescence spectra for GaAs/InGaAsN nanostructures and can be used as a guide for the design of nanostructured devices such as optoelectronic devices, solar cells, and others.

Dilute nitride semiconductor; Luminescence; <a onClick="popup('','MathML',630,470);return false;" target="_blank" href="">View MathML</a> method; p-doped; Nanostructures