Nano Express
Theoretical luminescence spectra in p-type superlattices based on InGaAsN
Author affiliations
1 Departamento de Física, Universidade Federal Rural de Pernambuco, Rua Dom Manoel de Medeiro s/n, Recife, Pernambuco, 52171-900, Brazil
2 Department of Physics, Texas State University, San Marcos, TX, 78666, USA
3 Instituto de Física de São Carlos, Universidade de São Paulo, CP369, São Carlos, São Paulo, 13560-970, Brazil
4 Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitária, Pernambuco, 50670-901, Brazil
Citation and License
Nanoscale Research Letters 2012, 7:607 doi:10.1186/1556-276X-7-607
Published: 31 October 2012Abstract
In this work, we present a theoretical photoluminescence (PL) for p-doped GaAs/InGaAsN
nanostructures arrays. We apply a self-consistent 
method in the framework of the effective mass theory. Solving a full 8 × 8 Kane's
Hamiltonian, generalized to treat different materials in conjunction with the Poisson
equation, we calculate the optical properties of these systems. The trends in the
calculated PL spectra, due to many-body effects within the quasi-two-dimensional hole
gas, are analyzed as a function of the acceptor doping concentration and the well
width. Effects of temperature in the PL spectra are also investigated. This is the
first attempt to show theoretical luminescence spectra for GaAs/InGaAsN nanostructures
and can be used as a guide for the design of nanostructured devices such as optoelectronic
devices, solar cells, and others.
Keywords:
Dilute nitride semiconductor; Luminescence;
method; p-doped; Nanostructures
