Theoretical luminescence spectra in p-type superlattices based on InGaAsN
1 Departamento de Física, Universidade Federal Rural de Pernambuco, Rua Dom Manoel de Medeiro s/n, Recife, Pernambuco, 52171-900, Brazil
2 Department of Physics, Texas State University, San Marcos, TX, 78666, USA
3 Instituto de Física de São Carlos, Universidade de São Paulo, CP369, São Carlos, São Paulo, 13560-970, Brazil
4 Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitária, Pernambuco, 50670-901, Brazil
Nanoscale Research Letters 2012, 7:607 doi:10.1186/1556-276X-7-607Published: 31 October 2012
In this work, we present a theoretical photoluminescence (PL) for p-doped GaAs/InGaAsN nanostructures arrays. We apply a self-consistent method in the framework of the effective mass theory. Solving a full 8 × 8 Kane's Hamiltonian, generalized to treat different materials in conjunction with the Poisson equation, we calculate the optical properties of these systems. The trends in the calculated PL spectra, due to many-body effects within the quasi-two-dimensional hole gas, are analyzed as a function of the acceptor doping concentration and the well width. Effects of temperature in the PL spectra are also investigated. This is the first attempt to show theoretical luminescence spectra for GaAs/InGaAsN nanostructures and can be used as a guide for the design of nanostructured devices such as optoelectronic devices, solar cells, and others.