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Resolution: standard / high Figure 3.
Change of ground state energy levels. As a function of N (a) and In (b) concentrations in Ga1 − xInxNyAs1 − y/GaAsDQW for different laser-dressing parameters.
Ungan et al. Nanoscale Research Letters 2012 7:606 doi:10.1186/1556-276X-7-606 |
