Figure 2.

The variation of energy levels. For bound states in Ga_{1 − x}In_xN_yAs_{1 − y}/GaAsDQW which has the width Lw₁ = Lw₂ = 100 Å, L_b = 50 Å as a function of the laser-dressing parameter. The results are as follows: (a) x = 0.15, y = 0.005; (b) x = 0.30, y = 0.005; and (c) x = 0.15, y = 0.01.