Figure 2.

The variation of energy levels. For bound states in Ga1 − xInxNyAs1 − y/GaAsDQW which has the width Lw1 = Lw2 = 100 Å, Lb = 50 Å as a function of the laser-dressing parameter. The results are as follows: (a) x = 0.15, y = 0.005; (b) x = 0.30, y = 0.005; and (c) x = 0.15, y = 0.01.

Ungan et al. Nanoscale Research Letters 2012 7:606   doi:10.1186/1556-276X-7-606
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