Effects of an intense, high-frequency laser field on bound states in Ga1 − x
In
x
N
y
As1 − y
/GaAs double quantum well

Fatih Ungan; Unal Yesilgul; Serpil Şakiroğlu; Esin Kasapoglu; Ayse Erol; Mehmet C Arikan; Huseyin Sarı; Ismail Sökmen

doi:10.1186/1556-276X-7-606

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Effects of an intense, high-frequency laser field on bound states in Ga_{1 − x}In_xN_yAs_{1 − y}/GaAs double quantum well

Fatih Ungan^*, Unal Yesilgul, Serpil Şakiroğlu, Esin Kasapoglu, Ayse Erol, Mehmet C Arikan, Huseyin Sarı and Ismail Sökmen

* Corresponding author: Fatih Ungan fungan@cumhuriyet.edu.tr

Nanoscale Research Letters 2012, 7:606 doi:10.1186/1556-276X-7-606

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Effects of an intense, high-frequency laser field on bound states in Ga_{1 − x}In_xN_yAs_{1 − y}/GaAs double quantum well

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Effects of an intense, high-frequency laser field on bound states in Ga1 − x In x N y As1 − y /GaAs double quantum well

Effects of an intense, high-frequency laser field on bound states in Ga_{1 − x}In_xN_yAs_{1 − y}/GaAs double quantum well