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Effects of an intense, high-frequency laser field on bound states in Ga1 − x In x N y As1 − y /GaAs double quantum well

Fatih Ungan1*, Unal Yesilgul1, Serpil Şakiroğlu2, Esin Kasapoglu1, Ayse Erol3, Mehmet Cetin Arikan3, Huseyin Sarı1 and Ismail Sökmen2

Author Affiliations

1 Physics Department, Cumhuriyet University, Sivas, 58140, Turkey

2 Physics Department, Dokuz Eylül University, İzmir, 35140, Turkey

3 Physics Department, İstanbul University, İstanbul, 34459, Turkey

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Nanoscale Research Letters 2012, 7:606  doi:10.1186/1556-276X-7-606

Published: 31 October 2012


Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 − xNyAs1 − y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 − xInxNyAs1 − y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.

Double quantum well; Intense laser field; Dilute nitride