Table 4

Peak position obtained by deconvolution from PL spectra and defect types relationated with the peak position
Defect types Peak positions (nm) Reference
1,400°C 1,300°C 1,150°C 1,050°C 900°C
NOV defects (O3 ≡ Si-Si ≡ O3) 428 483 458 467 [12]
Centers of defects E’δ 521 523 [12]
E’δ center or oxygen deficiency 553 559 [12,32]
Defect vacancies of oxygen (O ≡ Si-Si ≡ O) 591 600 579 584 [30,33]
Oxide relationated in the interface of Si/SiOx 675 695 [31,34]
Not identified 796 813

López et al.

López et al. Nanoscale Research Letters 2012 7:604   doi:10.1186/1556-276X-7-604

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