Figure 3.

Simulation of the WL evolution and fitting result of temperature dependence. (a) Simulation of WL evolution of the non-rotating samples at three different temperatures. The open and closed symbols stand for 2D and 3D growth stages, respectively. Here, we use b = 4 × 10⁻⁹, α = 0.8, β = 10, and E_dif = 1.04 eV to solve the rate equations numerically. The inset of (a) is the dependence of 3D growth time on InAs deposition rate for a given deposition time of 20 s. (b) The fitting result of the temperature dependence of WL thicknesses for the sample with a nominal InAs deposition amount of 1.45 ML. The inset shows the temperature dependence of desorption time constants for samples with different InAs deposition rates.