Figure 3.

Simulation of the WL evolution and fitting result of temperature dependence. (a) Simulation of WL evolution of the non-rotating samples at three different temperatures. The open and closed symbols stand for 2D and 3D growth stages, respectively. Here, we use b = 4 × 10−9, α = 0.8, β = 10, and Edif = 1.04 eV to solve the rate equations numerically. The inset of (a) is the dependence of 3D growth time on InAs deposition rate for a given deposition time of 20 s. (b) The fitting result of the temperature dependence of WL thicknesses for the sample with a nominal InAs deposition amount of 1.45 ML. The inset shows the temperature dependence of desorption time constants for samples with different InAs deposition rates.

Zhang et al. Nanoscale Research Letters 2012 7:600   doi:10.1186/1556-276X-7-600
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