Figure 1.

Second-derivative spectra and WL thickness evolution. (a) The second-derivative spectra (d2ρ / 2) of the series of samples grown at 530°C indicated by color contrast. The wavelengths of GaAs band edge, LH- and HH-related transitions in the WL are indicated by squares, circles, and triangles, respectively. (b) WL thickness evolution with InAs deposition amount for samples grown at different temperatures. Note that WL thicknesses are marked with open symbols at 2D growth stages, and solid symbols at 3D growth stage. The 2D to 3D transition points are determined in our previous work [16].

Zhang et al. Nanoscale Research Letters 2012 7:600   doi:10.1186/1556-276X-7-600
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