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Open Access Nano Express

Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

Hongyi Zhang, Yonghai Chen*, Guanyu Zhou, Chenguang Tang and Zhanguo Wang

Author affiliations

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, People's Republic of China

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Citation and License

Nanoscale Research Letters 2012, 7:600  doi:10.1186/1556-276X-7-600

Published: 30 October 2012


For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed an initial increase and then decrease at higher temperatures, which were unexpected from a thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD formation rate was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was given. Those results gave hints of the kinetic aspects of QD self-assembly.

Quantum dots; Stranski-Krastanov growth mode; Wetting layer; Desorption; Growth kinetics; 81.07.Ta; 81.05.Ea; 68.08.Bc; 78,67,Hc; 68.35.Rh