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Spin injection in n-type resonant tunneling diodes

Vanessa Orsi Gordo1, Leonilson KS Herval1, Helder VA Galeti1, Yara Galvão Gobato1*, Maria JSP Brasil2, Gilmar E Marques1, Mohamed Henini3 and Robert J Airey4

Author Affiliations

1 Physics Department, Federal University of São Carlos, São Carlos 13.565-905, Brazil

2 Gleb Wataghin Physics Institute, UNICAMP, Campinas, 13083-970, Brazil

3 School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK

4 Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S10 2TN, UK

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Nanoscale Research Letters 2012, 7:592  doi:10.1186/1556-276X-7-592

Published: 25 October 2012


We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to −88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

Spintronics; nanostructure; resonant tunneling diode; photoluminescence