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Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses

Hong-yi Xu1, Ya-nan Guo1, Wen Sun1, Zhi-ming Liao1, Timothy Burgess2, Hao-feng Lu2, Qiang Gao2, Hark Hoe Tan2, Chennupati Jagadish2 and Jin Zou13*

Author Affiliations

1 Materials Engineering, The University of Queensland, Brisbane, Queensland, 4072, Australia

2 Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory, 0200, Australia

3 Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, Queensland, 4072, Australia

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Nanoscale Research Letters 2012, 7:589  doi:10.1186/1556-276X-7-589

Published: 24 October 2012


In this letter, we quantitatively investigated epitaxial GaAs nanowires catalyzed by thin Au films of different thicknesses on GaAs (111)B substrates in a metal-organic chemical vapor deposition reactor. Prior to nanowire growth, the de-wetting of Au thin films to form Au nanoparticles on GaAs (111)B in AsH3 ambient at different temperatures is investigated. It is found that with increasing film thickness, the size of the Au nanoparticles increases while the density of the nanoparticles reduces. Furthermore, higher annealing temperature produces larger Au nanoparticles for a fixed film thickness. As expected, the diameters and densities of the as-grown GaAs nanowires catalyzed by these thin Au films reflect these trends.

III-V semiconductor; Electron microscopy; Epitaxial growth; GaAs nanowires; MOCVD