The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−x In x N y As1−y /GaAs quantum well
1 Physics Department, Cumhuriyet University, Sivas, 58140, Turkey
2 Physics Department, Dokuz Eylül University, Izmir, 35140, Turkey
3 Instituto de Fisica, Universidad de Antioquia, Medellin, AA, 1226, Colombia
4 Faculty of Sciences, Morelos State University, Cuernavaca, CP, 62209, Mexico
Nanoscale Research Letters 2012, 7:586 doi:10.1186/1556-276X-7-586Published: 24 October 2012
Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1−xInxNyAs1−y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.