Figure 5.

NW layout for conductivity measurement; tapping mode, AFM image and I-V characteristics of manipulated Mo NW. (a) Schematic of individual Mo NW layout for conductivity measurement. (b) Tapping mode AFM topographic image of a 4 nm Mo NW device (arrow points at the selected NW for I-V measurements). (c) AFM image of manipulated Mo NW showing its resiliency to plastic deformation. (d) I-V characteristics of 4 nm Mo NW shown in (b) exhibiting low two-terminal resistance. The NW shows a metallic conduction with a resistivity of only 2.5 larger than the Mo bulk resistivity.

Kovic et al. Nanoscale Research Letters 2012 7:567   doi:10.1186/1556-276X-7-567
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