Figure 5.

Schematic cross section of the experimental wafer before anodization. The p-type Piso and Pbase layers are formed in a 33- to 39-Ω cm n-type substrate (Nbulk). The junction depth Xj and the surface concentration Cs are given for both diffusions.

Menard et al. Nanoscale Research Letters 2012 7:566   doi:10.1186/1556-276X-7-566
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