Figure 6.

I-V characteristics. (a) Non-annealed sample, (b) annealed at 200°C sample, (c) annealed at 300°C sample, and (d) annealed at 400°C sample as MIS memory devices.

Goh et al. Nanoscale Research Letters 2012 7:563   doi:10.1186/1556-276X-7-563
Download authors' original image