Figure 1.

Process flow for sacrificial templated-growth hydrothermal reaction of AuNPs embedded in the PMMSQ memory device. (a) PMMSQ/n-Si, (b) deposited ZnO layer, (c) thermal oxidation of ZnO layer to form ZnO seeds, (d) AuNPs formed on PMMSQ/n-Si, (e) another PMMSQ layer was deposited on the AuNPs, and (f) desired memory device structure with Al as top and bottom electrodes.

Goh et al. Nanoscale Research Letters 2012 7:563   doi:10.1186/1556-276X-7-563
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