Table 2

VBOs calculated for the Ga2O3/GaN heterostructure using different combinations of the XPS core levels
Ga3d N1s
Ga3d 1.54 1.47
O1s 1.25 1.32

The errors in the VBOs are ±0.08 eV.

Wei et al.

Wei et al. Nanoscale Research Letters 2012 7:562   doi:10.1186/1556-276X-7-562

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