Table 2
|
| VBOs calculated for the Ga2O3/GaN heterostructure using different combinations of
the XPS core levels |
|
Ga3d |
N1s |
| Ga3d |
1.54 |
1.47 |
| O1s |
1.25 |
1.32 |
The errors in the VBOs are ±0.08 eV.
Wei et al. Nanoscale Research Letters 2012 7:562 doi:10.1186/1556-276X-7-562