Table 1

XPS core-level spectra curve-fitting results and VBM positions used to calculate VBO of the Ga2O3/GaN heterostructure
Sample State Binding energy (eV) Bonding FWHM (eV)
Ga2O3 Ga 3d 20.22 Ga-O 1.35
O1s 531.15 Ga-O 1.58
VBM 3.10
GaN Ga3d 19.89 Ga-N 1.35
N1s 397.18 Ga-N 1.18
395.61 Ga Auger 1.89
393.44 Ga Auger 2.95
VBM 2.22
Ga2O3/GaN Ga3d 20.56 Ga-O 1.23
19.57 Ga-N 1.03
O1s 531.27 Ga-O 1.72
N1s 396.93 Ga-N 1.75
395.36 Ga-Auger 2.36
393.19 Ga-Auger 3.02

FWHM, full width at half maximum.

Wei et al.

Wei et al. Nanoscale Research Letters 2012 7:562   doi:10.1186/1556-276X-7-562

Open Data