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Table 1
XPS core-level spectra curve-fitting results and VBM positions used to calculate VBO of the Ga2O3/GaN heterostructure
Sample	State	Binding energy (eV)	Bonding	FWHM (eV)
Ga₂O₃	Ga 3d	20.22	Ga-O	1.35
	O1s	531.15	Ga-O	1.58
	VBM	3.10
GaN	Ga3d	19.89	Ga-N	1.35
	N1s	397.18	Ga-N	1.18
		395.61	Ga Auger	1.89
		393.44	Ga Auger	2.95
	VBM	2.22
Ga₂O₃/GaN	Ga3d	20.56	Ga-O	1.23
		19.57	Ga-N	1.03
	O1s	531.27	Ga-O	1.72
	N1s	396.93	Ga-N	1.75
		395.36	Ga-Auger	2.36
		393.19	Ga-Auger	3.02

FWHM, full width at half maximum.

Wei et al. Nanoscale Research Letters 2012 7:562 doi:10.1186/1556-276X-7-562

Table 1