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Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

Wei Wei1, Zhixin Qin1*, Shunfei Fan1, Zhiwei Li2, Kai Shi2, Qinsheng Zhu2 and Guoyi Zhang1

Author Affiliations

1 State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China

2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China

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Nanoscale Research Letters 2012, 7:562  doi:10.1186/1556-276X-7-562

Published: 10 October 2012


A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

β-Ga2O3/wurtzite GaN heterostructure; Band offset; X-ray photoelectron spectroscopy